CPH6623 no. a0423-1/4 ordering number : ena0423 CPH6623 p-channel silicon mosfet general-purpose switching device applications features ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 20 v drain current (dc) i d --1.5 a drain current (pulse) i dp pw 10 m s, duty cycle 1% --6.0 a allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --1.2 --2.6 v forward transfer admittance ? yfs ? v ds =--10v, i d =--0.8a 0.9 1.5 s static drain-to-source on-state resistance r ds (on)1 i d =--0.8a, v gs =--10v 210 275 m w r ds (on)2 i d =--0.4a, v gs =--4v 350 490 m w input capacitance ciss v ds =--10v, f=1mhz 185 pf output capacitance coss v ds =--10v, f=1mhz 30 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 20 pf turn-on delay time t d (on) see specified test circuit. 7 ns rise time t r see specified test circuit. 4 ns turn-off delay time t d (off) see specified test circuit. 22 ns fall time t f see specified test circuit. 8 ns marking : wj continued on next page. 82306 / 62006pe ms im tb-00002418 sanyo semiconductors data sheet any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan
CPH6623 no. a0423-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit total gate charge qg v ds =--10v, v gs =--10v, i d =--1.5a 4.7 nc gate-to-source charge qgs v ds =--10v, v gs =--10v, i d =--1.5a 0.8 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--10v, i d =--1.5a 0.7 nc diode forward voltage v sd i s =--1.5a, v gs =0v --0.88 --1.5 v package dimensions electrical connection unit : mm 7018a-010 switching time test circuit 1 : gate1 2 : source2 3 : gate2 4 : drain2 5 : source1 6 : drain1 sanyo : cph6 3 2 1 64 5 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 pw=10 m s d.c. 1% p. g 50 w g s d i d = --0.8a r l =18.7 w v dd = --15v v out CPH6623 v in 0v --10v v in 0 --0.2 --0.4 --1.0 --1.2 --1.4 --2.0 --1.6 --1.8 --0.8 --0.6 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 v ds = --10v 25 c --25 c ta=75 c it02666 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 0 0 --0.2 --0.4 --1.0 --1.2 --1.4 --2.0 --1.6 --1.8 --0.2 --0.8 --0.6 --0.5 --1.0 --0.8 --0.9 --0.1 --0.3 --0.4 --0.6 --0.7 v gs = --3v --10v --5v --6v --8v it04057 --4v 654 123 1 : gate1 2 : source2 3 : gate2 4 : drain2 5 : source1 6 : drain1 top view
CPH6623 no. a0423-3/4 it02670 0 --0.6 --0.4 --0.2 --0.8 --1.0 --1.2 --1.4 --0.01 --10 --1.0 --0.1 7 7 5 5 3 3 2 2 7 5 3 2 v gs =0v --25 c 25 c ta=75 c it02669 --0.01 0.1 --0.1 23 57 --1.0 23 57 23 1.0 7 5 3 2 3 2 v ds = --10v 75 c 25 c ta= --25 c ? y fs ? -- i d drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a sw time -- i d switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0 10 -- 5 100 1000 7 5 3 2 7 5 3 2 --30 --10 --15 --20 --25 f=1mhz ciss coss crss it02671 --0.1 --1.0 357 2357 23 100 7 5 3 2 2 10 1.0 7 5 3 v dd = --15v v gs = --10v t d (on) t d (off) t r t f it02672 100ms dc operation 1ms 10ms i dp = --6a 2 3 5 7 2 3 5 7 2 3 5 7 --10 --1.0 --0.1 --0.01 23 57 23 57 23 5 --0.1 --1.0 --10 it04061 10 m s operation in this area is limited by r ds (on). i d = --1.5a 0 0 -- 2 -- 4 -- 6 -- 8 5.0 4.5 3.5 4.0 2.0 2.5 3.0 1.0 0.5 1.5 --10 v ds = --10v i d = --1.5a it04060 ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm)1unit static drain-to-source on-state resistance, r ds (on) -- m w ambient temperature, ta -- c gate-to-source voltage, v gs -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m w 0 --1 --2 --3 --4 --5 --6 200 100 300 400 500 600 700 800 0 200 100 300 400 500 600 0 --7 --8 --9 --10 it11085 r ds (on) -- ta it11086 --60 --40 --20 0 20 40 60 80 100 120 140 160 i d = --0.4a, v gs = --4v i d = --0.8a, v gs = --10v ta=25 c i d = --0.4a --0.8a
CPH6623 no. a0423-4/4 ps note on usage : since the CPH6623 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0.2 0.4 0.6 0.8 0.9 1.0 0 0 20 40 60 80 100 120 140 160 it04062 mounted on a ceramic board (900mm 2 5 0.8mm)1unit this catalog provides information as of june, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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